• 姓       名:高永立
  • 职       称:教授
  • 学       位:博士
  • 所在机构:中南大学 物理与电子学院
  • 出生年月:
  • 籍       贯:
  • E  - mail:ygao@csu.edu.cn
  • 研究方向:有机半导体表面及界面的电子结构;有机半导体薄膜的的形成和形态;有机半导体界面的电子自旋注入
个人简介 学术成果 发表论文

教育背景

1981/09 – 1986/06,Purdue大学,物理系,博士

1977/09 – 1981/06,中南矿冶学院(现中南大学),物理系,学士

工作经历

2010年-至今,中南大学,超微结构与超快过程湖南省重点实验,教授。

1999年-至今,美国罗切斯特大学,教授

1994年-1999年,美国罗切斯特大学,副教授

1988年-1994年,美国罗切斯特大学,助理教授

1986年- 1988年,美国明尼苏达大学,博士后副研究员

学术兼职

美国国家科学基金会那佛尔德大学(Norfold)CREST研究中心顾问,美国国家科学基金会项目评议委员。

科研项目

1)2014/01 - 2018/12,国家自然科学基金重点项目,有机半导体二维自旋输运及原型器件研究(11334014) ,320 万;

2)2012/01 - 2015/12,国家自然科学基金面上项目,有机半导体自旋的注入和反转机理(51173205),60 万;

论文专著

专著:

1. Y. Gao, “Organic/Metal Interface Properties,” in Introduction to Organic Optoelectronic Materials and Devices, Ed. S. Sun and L. Dalton, 637 (Taylor& Francis CRC Press, New York, 2008).

2.Y. Gao, “Interface in Organic Semiconductor Devices: Dipole, Doping, Band Bending, and Growth,” in Organic Electronics :Materials, Processing, Devices, and Applications, Ed. F. So, 141 (Taylor& Francis CRC Press, New York, 2009).

3.Y. Gao, Interface in Organic Semiconductor Devices: Dipole, Doping, Band Bending, and Growth, in Organic Electronics :Materials, Processing, Devices, and Applications, Ed. F. So, 141 (Taylor& Francis CRC Press, New York, 2009).

期刊论文:

1· Cinchetti,* M., Heimer, K., Wüstenberg, J.-P., Andreyev, O., Bauer, M., Lach, S., Ziegler, C., Gao, Y. & Aeschlimann, M., Determination of spin injection and transport in a ferromagnet/organic semiconductor heterojunction by two-photon photoemission, Nature Material, 8, 115 (2009).

2· Ding, H., Park, K.W., Gao, Y.,* Kim, D.Y.& So, F., Electronic structure and interactions of LiF doped tris (8-hydroxyquinoline) aluminum (Alq), Chem. Phys. Lett.473, 92 (2009).

3· Wei, J. H., Gao, Y.L.& Wang, X.R.*, Inverse Square-Root Field Dependence of Conductivity in Organic Field-Effect Transistors, Appl. Phys. Lett.94, 073301 (2009).

4· Kim, D.Y., Subbiah, J., Sarasqueta, G., So, F., Ding, H., Irfan & Gao,Y.*, The effect of molybdenum oxide interlayer on organic photovoltaic cells, Appl. Phys. Lett.95, 093304 (2009).

5· Gao,Y.,* Surface Analytical Studies of Interfaces in Organic Semiconductor Devices, Materials Sci. Engr. Rep. 68, 39 (2010). (应邀学科综述)

6· Irfan, Ding, H., Gao, Y.*, Kim, D.-Y., Subbiah, J., Sarasqueta, G.& So,F. Energy level evolution of molybdenum trioxide inter-layer between indium-tin-oxide (ITO) and organic semiconductor, Appl. Phys. Lett., 96, 073304 (2010).

7· Ding, H., Reese, C., Mkinen, A. J., Bao, Z.& Gao, Y.*, Angle-resolved photoemission study of rubrene single crystal, Appl. Phys. Lett.96, 222106 (2010).

8· Zhang, M., Irfan, Ding, H., Gao, Y.& Tang, C. W.*, Organic Schottky barrier solar cells based on MoOX/C60 junction, Appl. Phys. Lett.96, 183301 (2010).

9· Irfan, Ding, H., Gao, Y.*, Small, C., Kim, D.Y., Subbiah, J. & So, F., Energy level evolution of air and oxygen exposed molybdenum trioxide films, Appl. Phys. Lett. 96, 243307 (2010).

10· H. Ding and Yongli Gao*, "Rubrene electronic structure, interface energy level alignment, and growth dynamics," Proc. SPIE 7778, 77780J (2011).

11· Irfan, H. Ding, F. So, and Y. Gao*, "Oxide insertion layer in organic semiconductor devices," J. Photo. Energy 1, 011105 (2011).

12· Irfan, M. Zhang, H. Ding, C. W. Tang and Y. Gao*, "Strong interface p-doping and band bending in C60 on MoOx", J. Org. Elec. 12, 1588 (2011).

13· Hao Lin, Irfan, Wei Xia, Hsiang N. Wu, Yongli Gao, Ching W. Tang*, "MoOx back contact for CdS/CdTe thin film solar cells: Preparation, device characteristics, and stability," Sol. En. Mat. Sol. Cells, 99, 349 (2012).

14· Irfan, C.G. Wang, A.J. Turinske, and Y. Gao,* “Methods to protect and recover work function of air exposed transition metal oxide thin films,” Proc. SPIE 8476, 847616 (2012).

15· Irfan Irfan, H. Lin, W. Xia, H. S. Wu, C. W. Tang, and Y. Gao,* “The effect of MoOx inter-layer on thin film CdTe/CdS solar cell”, Sol. Ener. Mater. Sol. Cells 105, 86 (2012).

16· Jegadesan Subbiah, Chad M. Amb, Irfan Irfan, Yongli Gao*, John R. Reynolds*, and Franky So*, “High-Efficiency Inverted Polymer Solar Cells with Double Interlayer,” ACS Appl. Mater. Interf. 4, 866 (2012).

17· Irfan, Y. Gao*, “Effects of exposure and air annealing on MoOx thin films,” J. Photonics for Energy 2, 021213-12 (2012).

18· Irfan and Y. Gao*, “Metal-Oxides Hole Injection/Extraction Layer in Organic Semiconductor Devices,” ECS Transactions 35(19), 11 (2012).

19· Irfan, H. Ding, Yongli Gao*, W. Xia, H. Lin, and C. W. Tang, “Nitric-phosphoric acid etching effects on the surface chemical composition of CdTe thin film,” Thin Solid Films 520, 1988 (2012).

20· H. Lin, W. Xia, H.N. Wu, C.W. Tang, I. Irfan, Y. Gao*, “MoOx as an Efficient and Stable Back Contact Buffer for Thin Film CdTe Solar Cells,” MRS Online Proc. 1447 DOI: http://dx.doi.org/10.1557/opl.2012.1164 (2012).

21· Sondra L. Hellstrom, Michael Vosgueritchian, Randall M. Stoltenberg, Irfan Irfan, Mallory Hammock, Bril Wang, Chuangcheng Jia, Xuefeng Guo, Yongli Gao, Zhenan Bao*, “Strong and stable doping of carbon nanotubes and graphene by MoOx for transparent electrodes,” Nano Lett. 12, 3574 (2012).

22· Irfan, A.J. Turinske, Zhenan Bao, and Yongli Gao,* “Work function recovery of air exposed molybdenum oxide thin films,” Appl. Phys. Lett. 101, 093305 (2012).

23· Irfan Irfan, Sachiko Graber, Franky So, and Yongli Gao*,“Interplay of cleaning and de-doping in oxygen plasma treated high work function indium tin oxide (ITO),” Org. Elec. 13, 2028 (2012).